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| NTE300 (NPN) & NTE307 (PNP) Silicon Complementary Transistors Audio Power Amplifier Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Collector Power Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Symbol Test Conditions Min 50 40 5 - - 55 - - Typ - - - - - - - 0.7 Max - - - 1 1 300 1 - V V Unit V V V A A V(BR)CBO IC = 1mA, IE = 0 V(BR)EBO IC = 10mA, RBE = V(BR)EBO IE = 1mA, IC = 0 ICBO IEBO hFE VCE(sat) VBE VCB = 25V, IE = 0 VEB = 5V, IC = 0 VCE = 4V, IC = 500mA IC = 1A, IB = 50mA VCE = 4V, IC = 50mA .380 (9.56) C .500 (12.7) 1.200 (30.48) Ref .180 (4.57) .132 (3.35) Dia .325 (9.52) .300 (7.62) .070 (1.78) x 45 Chamf .050 (1.27) .400 (10.16) Min E B C .100 (2.54) .100 (2.54) |
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